The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
May. 29, 2013
Applicants:
Jun-youn Kim, Hwaseong-si, KR;
Bok-ki Min, Suwon-si, KR;
Hyun-gi Hong, Suwon-si, KR;
Jae-won Lee, Suwon-si, KR;
Inventors:
Jun-youn Kim, Hwaseong-si, KR;
Bok-ki Min, Suwon-si, KR;
Hyun-gi Hong, Suwon-si, KR;
Jae-won Lee, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/46 (2010.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01); B82Y 20/00 (2013.01); H01L 33/007 (2013.01); Y10S 977/893 (2013.01); Y10S 977/95 (2013.01);
Abstract
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.