The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
Nov. 04, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Inventors:
Jun-Youn Kim, Hwaseong-si, KR;
Jae-Kyun Kim, Hwaseong-si, KR;
Joo-Sung Kim, Seongnam-si, KR;
Young-Soo Park, Yongin-si, KR;
Young-Jo Tak, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02458 (2013.01); C30B 25/183 (2013.01); C30B 29/403 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02507 (2013.01); H01L 21/02609 (2013.01); H01L 21/02658 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01);
Abstract
Provided are a semipolar nitride semiconductor structure and a method of manufacturing the same. The semipolar nitride semiconductor structure includes a silicon substrate having an Si(11k) surface satisfying 7≦k≦13; and a nitride semiconductor layer formed on the silicon substrate. The nitride semiconductor layer has a semipolar characteristic in which a polarization field is approximately 0.