The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2016

Filed:

Dec. 09, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Su-hee Chae, Suwon-si, KR;

Young-soo Park, Yongin-si, KR;

Bok-ki Min, Suwon-si, KR;

Jun-youn Kim, Hwaseong-si, KR;

Hyun-gi Hong, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/12 (2010.01); H01L 33/24 (2010.01); H01L 33/22 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0066 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/12 (2013.01); H01L 33/24 (2013.01); H01L 33/382 (2013.01); H01L 33/22 (2013.01); H01L 33/405 (2013.01); H01L 2933/0016 (2013.01);
Abstract

Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.


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