The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Sep. 13, 2012
Applicants:
Jun-youn Kim, Suwon-si, KR;
Jae-kyun Kim, Hwaseong-si, KR;
Su-hee Chae, Suwon-si, KR;
Hyun-gi Hong, Suwon-si, KR;
Inventors:
Jun-youn Kim, Suwon-si, KR;
Jae-Kyun Kim, Hwaseong-si, KR;
Su-hee Chae, Suwon-si, KR;
Hyun-gi Hong, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/18 (2006.01); H01L 21/02 (2006.01); C30B 29/06 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 25/186 (2013.01); C30B 29/06 (2013.01); C30B 29/403 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02381 (2013.01); H01L 21/02639 (2013.01); H01L 21/02658 (2013.01);
Abstract
Crack formation and propagation in a silicon substrate may be reduced by forming a crack reducing portion. The silicon substrate includes a silicon main portion and a silicon edge portion formed around the silicon main portion. The crack reducing portion is formed on the silicon edge portion of the silicon substrate such that the directions of crystal faces in the crack reducing portion are randomly oriented.