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Hwaseong-si, South Korea

Jong-seob Kim

USPTO Granted Patents = 50 (Patent Applications = 7)

Average Co-Inventor Count = 5.4

ph-index = 7

Forward Citations = 159(Granted Patents)

Forward Citations (Not Self Cited) = 155(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Gyeonggi-do, KR (2007)
Yongin-si, KR (2010 - 2011)
Suwon-si, KR (2008 - 2014)
Seoul, KR (2010 - 2016)
Hwaseong-si, KR (2012 - 2018)

Company Filing History:

48 out of 131,611

Samsung Electronics Co., Ltd.

Cheil Industries Inc.

Samsung Sdi Co., Inc.

4. 1 out of 336

Kyungpook National University Industry-Academic Cooperation Foundation

where one patent can have more than one assignee

Years Active: 2007-2018

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Areas of Expertise:

High Electron Mobility Transistors

Field Effect Semiconductor Devices

Power Electronic Devices

E-Mode High Electron Mobility Transistor

Spin Field Effect Logic Devices

Chemical Sensors

Nonvolatile Memory Devices

Quantum Interference Transistors

Light Emitting Diodes

Nanowire Devices

Luminous Devices

Liquid Crystal Displays

50 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9859410 - High electron mobility transistors and methods of fabricating the same (2018-01-02),

2. 9660048 - High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same (2017-05-23),

3. 9608100 - High electron mobility transistor and method of manufacturing the same (2017-03-28),

4. 9570597 - High electron mobility transistor (2017-02-14),

5. 9450071 - Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices (2016-09-20),

6. 9443968 - High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same (2016-09-13),

7. 9356592 - Method of reducing current collapse of power device (2016-05-31),

8. 9299800 - Methods of manufacturing high electron mobility transistors (2016-03-29),

9. 9252255 - High electron mobility transistor and method of manufacturing the same (2016-02-02),

10. 9245947 - High electron mobility transistors and methods of manufacturing the same (2016-01-26),

11. 9245738 - High electron mobility transistor and method of manufacturing the same (2016-01-26),

12. 9231093 - High electron mobility transistor and method of manufacturing the same (2016-01-05),

13. 9202904 - Power device chip and method of manufacturing the power device chip (2015-12-01),

14. 9123740 - High electron mobility transistors and methods of manufacturing the same (2015-09-01),

15. 9117890 - High-electron mobility transistor and method of manufacturing the same (2015-08-25),

Title: Jong-seob Kim: Pioneering Inventor from Hwaseong-si, South Korea

Introduction: Jong-seob Kim is a renowned inventor hailing from the vibrant city of Hwaseong-si in South Korea. With a passion for innovation and a keen eye for technological advancements, Kim has made significant contributions to the field of patents and inventions.

Latest Patents: Kim's latest patents focus on cutting-edge technologies in the fields of artificial intelligence, renewable energy, and sustainable materials. His innovative solutions have garnered attention globally for their potential to revolutionize various industries.

Career Highlights: Throughout his illustrious career, Kim has been instrumental in developing groundbreaking inventions that have reshaped the way we approach modern challenges. His commitment to pushing the boundaries of innovation has earned him recognition as a trailblazer in the field.

Collaborations: Kim has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. By fostering partnerships with experts in diverse fields, he has been able to leverage collective knowledge and expertise to drive his projects forward.

Conclusion: Jong-seob Kim's dedication to innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor. His work continues to inspire future generations of inventors and serves as a testament to the power of creativity and ingenuity in shaping a better tomorrow.

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