The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Sep. 13, 2010
Ki-ha Hong, Cheonan-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Jae-joon OH, Seongnam-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
In-jun Hwang, Hwaseong-si, KR;
Ho-jung Kim, Suwon-si, KR;
Ki-ha Hong, Cheonan-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Jae-joon Oh, Seongnam-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
In-jun Hwang, Hwaseong-si, KR;
Ho-jung Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer.