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For the Inventor, By the Inventor

Cheonan-si, South Korea

Ki-ha Hong

USPTO Granted Patents = 44 

Average Co-Inventor Count = 5.0

ph-index = 5

Forward Citations = 99(Granted Patents)


Location History:

  • Yongin-si, KR (2010 - 2011)
  • Seoul, KR (2008 - 2014)
  • Cheonan-si, KR (2012 - 2018)

Company Filing History:

goldMedal44 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal1 out of 335 
 
Kyungpook National University Industry-academic Cooperation Foundation
 patents
where one patent can have more than one assignee

Years Active: 2008-2018

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44 patents (USPTO):Explore Patents
1. 9859410 - High electron mobility transistors and methods of fabricating the same (2018-01-02),
2. 9666706 - Method of manufacturing a semiconductor device including a gate electrode on a protruding group III-V material layer (2017-05-30),
3. 9660048 - High electron mobility transistors exhibiting dual depletion and methods of manufacturing the same (2017-05-23),
4. 9450071 - Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices (2016-09-20),
5. 9443968 - High electron mobility transistors including lightly doped drain regions and methods of manufacturing the same (2016-09-13),
6. 9419094 - Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device (2016-08-16),
7. 9343564 - Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device (2016-05-17),
8. 9324852 - Semiconductor device including a gate electrode on a protruding group III-V material layer (2016-04-26),
9. 9299800 - Methods of manufacturing high electron mobility transistors (2016-03-29),
10. 9245947 - High electron mobility transistors and methods of manufacturing the same (2016-01-26),
11. 9123740 - High electron mobility transistors and methods of manufacturing the same (2015-09-01),
12. 9070706 - Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device (2015-06-30),
13. 8921890 - Substrate structure, semiconductor device fabricated from the same, and method of fabricating the semiconductor device (2014-12-30),
14. 8878246 - High electron mobility transistors and methods of fabricating the same (2014-11-04),
15. 8835985 - Power electronic device and method of manufacturing the same (2014-09-16),

Title: The Innovative Contributions of Ki-ha Hong in the Field of Semiconductor Technology

Introduction: Ki-ha Hong, a prolific inventor based in Cheonan-si, South Korea, has made significant strides in the field of semiconductor technology. With an impressive total of 44 patents to his name, his work primarily focuses on high electron mobility transistors and advanced semiconductor devices.

Latest Patents: Among his latest contributions, Hong has developed a high electron mobility transistor (HEMT) that includes a unique configuration with a source electrode, a gate electrode, and a drain electrode. This design features a channel forming layer where a two-dimensional electron gas (2DEG) channel is induced, demonstrating his dedication to enhancing transistor performance. Additionally, he has patented a method for manufacturing a semiconductor device with a gate electrode on a protruding group III-V material layer. This innovation provides a structure optimized for performance, including a group III-V barrier and a uniform group III-V material layer, significantly impacting semiconductor fabrication processes.

Career Highlights: Ki-ha Hong has a rich career, having worked with leading companies such as Samsung Electronics Co., Ltd. and the Kyungpook National University Industry-academic Cooperation Foundation. His expertise in semiconductor technology has led to noteworthy advancements in the creation and development of innovative electronic components.

Collaborations: Throughout his career, Hong has collaborated with esteemed colleagues, including Jai-kwang Shin and Jong-seob Kim. These partnerships have facilitated the exchange of ideas and the advancement of semiconductor research, underscoring the importance of teamwork in driving innovation in technology.

Conclusion: Ki-ha Hong's contributions to the field of semiconductor technology through his numerous patents and collaborations highlight his role as a pioneering inventor. His work not only advances current technology but also sets the foundation for future innovations in high electron mobility transistors and semiconductor devices.

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