The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Sep. 13, 2012
Hyuk-soon Choi, Hwaseong-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Chang-yong Um, Seoul, KR;
Jae-joon OH, Seongnam-si, KR;
Jong-bong Ha, Daegu, KR;
Ki-ha Hong, Cheonan-si, KR;
In-jun Hwang, Hwaseong-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Chang-yong Um, Seoul, KR;
Jae-joon Oh, Seongnam-si, KR;
Jong-bong Ha, Daegu, KR;
Ki-ha Hong, Cheonan-si, KR;
In-jun Hwang, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer and a channel layer. The channel layer may include an effective channel region and a high resistivity region. The effective channel region may be between the high resistivity region and the channel supply layer. The high resistivity region may be a region into which impurities are ion-implanted. According to example embodiments, a method of forming a HEMT includes forming a device unit, including a channel layer and a channel supply layer, on a first substrate; adhering a second substrate to the device unit; removing the first substrate; and forming a high resistivity region by ion-implanting impurities into at least a portion of the channel layer.