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Seoul, South Korea

Chang-yong Um

This inventor holds 5 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-yong Um. Retrieved from https://idiyas.com/inventor/chang-yong-um

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5

% Patents Active = 80.0

Average Co-Inventor Count = 3.5

ph-index = 1

Forward Citations = 37(Granted Patents)


Company Filing History:

goldMedal5 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2011-2015

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5 patents (USPTO):Explore Patents
1. 9184280 - Semiconductor device having dual parallel channel structure and method of fabricating the same (2015-11-10),
2. 9129835 - Semiconductor device and method of manufacturing the same (2015-09-08),
3. 9123740 - High electron mobility transistors and methods of manufacturing the same (2015-09-01),
4. 8921890 - Substrate structure, semiconductor device fabricated from the same, and method of fabricating the semiconductor device (2014-12-30),
5. 7969798 - Phase change memory devices and read methods using elapsed time-based read voltages (2011-06-28),

Title: **Inventor Chang-yong Um: Innovating Semiconductor Technology**

Introduction

Chang-yong Um is a prominent inventor based in Seoul, South Korea, recognized for his contributions to the semiconductor industry. With a total of five patents, his work focuses on improving semiconductor device designs, enhancing performance and efficiency in electronic applications.

Latest Patents

Chang-yong Um's latest innovations include two significant patents that showcase his expertise in semiconductor technology. The first patent, “Semiconductor device having dual parallel channel structure and method of fabricating the same,” describes a device that incorporates a substrate with a drift region doped to a first conduction type. This design features an etched trench with arrangements for gates and source regions that optimize the electrical characteristics of the device.

The second patent, titled “Semiconductor device and method of manufacturing the same,” introduces a drift layer with a trench formed on a semiconductor substrate. This innovation improves carrier distribution within the drift layer, providing enhanced operational efficiency through systematic doping of impurities.

Career Highlights

Chang-yong Um is currently employed at Samsung Electronics Co., Ltd., a world leader in technology and consumer electronics. His work at Samsung has been instrumental in advancing semiconductor technologies, contributing to the company’s reputation for innovation and excellence in the field.

Collaborations

Throughout his career, Chang-yong Um has collaborated with various talented individuals, notably colleagues Jai-kwang Shin and Hyuk-Soon Choi. Their joint efforts have propelled advancements in semiconductor designs, demonstrating the power of teamwork in achieving groundbreaking innovations.

Conclusion

Chang-yong Um exemplifies the spirit of innovation in the semiconductor industry. His patents not only reflect his expertise but also contribute significantly to the technology that powers modern electronic devices. As he continues his work at Samsung Electronics Co., Ltd., the impact of his contributions will likely shape the future of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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