The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Apr. 23, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 27/088 (2006.01); H01L 21/82 (2006.01); H01L 21/8232 (2006.01); H01L 21/04 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/049 (2013.01); H01L 21/0455 (2013.01); H01L 21/0475 (2013.01); H01L 21/8213 (2013.01); H01L 21/8232 (2013.01); H01L 29/7827 (2013.01);
Abstract
A semiconductor device includes a drift layer including a trench formed on a semiconductor substrate. A well in the drift layer overlaps an edge of the trench, and at least one gate electrode is formed at this overlapping edge region. The drift layer and semiconductor may be doped with a first type of impurity and the well may be doped with a second type of impurity. Through this arrangement, an improved distribution of carriers may be formed in the drift layer.