Seongnam-si, South Korea

Jae-joon Oh

USPTO Granted Patents = 45 

Average Co-Inventor Count = 5.2

ph-index = 7

Forward Citations = 169(Granted Patents)


Location History:

  • Kyungki-do, KR (2004)
  • Seongnam-si, KR (2006 - 2018)

Company Filing History:


Years Active: 2004-2018

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45 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Jae-joon Oh in High Electron Mobility Transistor Technology

Introduction: Jae-joon Oh is a notable inventor based in Seongnam-si, South Korea, who has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 45 patents, his work primarily focuses on high electron mobility transistors (HEMTs), which are crucial for advanced electronic applications.

Latest Patents: Among his latest patents, Jae-joon Oh has developed techniques for high electron mobility transistors and methods for fabricating the same. His innovations include a HEMT design featuring a source electrode, gate electrode, and drain electrode, along with a channel-forming layer that induces a two-dimensional electron gas (2DEG) channel. Notably, the design incorporates a channel increase layer between the channel supplying layer and the source and drain electrodes, with the channel supplying layer's thickness being less than approximately 15 nm.

Another significant patent involves high electron mobility transistors exhibiting dual depletion and the methods for their manufacturing. This HEMT includes a source electrode, gate electrode, and drain electrode arranged on various semiconductor layers with differing polarities, thereby creating a dual depletion region between the source and drain electrodes. The configuration of the upper, intermediate, and lower material layers showcases his innovative approach to enhancing transistor performance.

Career Highlights: Jae-joon Oh's career has been distinguished by his roles at prestigious organizations, including Samsung Electronics and Kyungpook National University Industry-Academic Cooperation Foundation. His work in these esteemed institutions has allowed him to lead research initiatives and drive advancements in HEMT technology.

Collaborations: Throughout his career, Jae-joon Oh has collaborated with talented professionals, including coworkers Jai-kwang Shin and In-jun Hwang. These partnerships have fostered an environment of innovation and knowledge sharing, leading to impactful advancements in their field.

Conclusion: Jae-joon Oh's contributions to high electron mobility transistor technology have solidified his status as a leading inventor in the semiconductor sector. With 45 patents to his name, his pioneering work continues to influence the design and fabrication of advanced electronic components, showcasing his dedication to innovation and excellence in engineering.

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