The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Jun. 14, 2012
In-jun Hwang, Hwaseong-si, KR;
Jae-joon OH, Seongnam-si, KR;
Jae-won Lee, Seoul, KR;
Hyo-ji Choi, Seoul, KR;
In-jun Hwang, Hwaseong-si, KR;
Jae-joon Oh, Seongnam-si, KR;
Jae-won Lee, Seoul, KR;
Hyo-ji Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to example embodiments a transistor includes a channel layer on a substrate, a first channel supply layer on the channel, a depletion layer, a second channel supply layer, source and drain electrodes on the first channel supply layer, and a gate electrode on the depletion layer. The channel includes a 2DEG channel configured to generate a two-dimensional electron gas and a depletion area. The first channel supply layer corresponds to the 2DEG channel and defines an opening that exposes the depletion area. The depletion layer is on the depletion area of the channel layer. The second channel supply layer is between the depletion layer and the depletion area.