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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9570597 B1

PDFFull Text
Date of Patent:
Feb. 14, 2017

Filed:

Jan. 02, 2013

High electron mobility transistor

Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Woo-chul Jeon, Daegu, KR;

Jong-seob Kim, Hwaseong-si, KR;

Ki-yeol Park, Suwon-si, KR;

Young-hwan Park, Seoul, KR;

Jai-kwang Shin, Anyang-si, KR;

Jae-joon Oh, Seongnam-si, KR;

Jong-bong Ha, Yongin-si, KR;

Sun-kyu Hwang, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

John C Ingham

Assistant Examiner:

Didarul Mazumder

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/42376 (2013.01); H01L 29/7786 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01); H01L 29/4236 (2013.01);
Abstract

According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.

Find Patent Forward Citations

Jeon, Woo-chul. (2017). High electron mobility transistor (U.S. Patent No. 9570597). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9570597

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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