The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Nov. 27, 2013
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Woo-chul Jeon, Daegu, KR;
Jong-seob Kim, Seoul, KR;
Ki-yeol Park, Suwon-si, KR;
Young-hwan Park, Seoul, KR;
Jai-kwang Shin, Anyang-si, KR;
Jae-joon Oh, Seongnam-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
In-jun Hwang, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to example embodiments, a high electron mobility transistor (HEMT) includes a channel layer; a channel supply layer on the channel layer; a source electrode and a drain electrode spaced apart from each other on one of the channel layer and the channel supply layer; a gate electrode on a part of the channel supply layer between the source electrode and the drain electrode; a first depletion-forming layer between the gate electrode and the channel supply layer; and a at least one second depletion-forming layer on the channel supply layer between the gate electrode and the drain electrode. The at least one second depletion-forming layer is electrically connected to the source electrode.