The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2016
Filed:
Jun. 27, 2012
Applicants:
In-jun Hwang, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
Jae-joon OH, Seongnam-si, KR;
Jong-bong Ha, Yongin-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Inventors:
In-jun Hwang, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
Jae-joon Oh, Seongnam-si, KR;
Jong-bong Ha, Yongin-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Assignee:
Samsung Electronics Co., LTD., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/335 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 29/66462 (2013.01); H01L 29/7782 (2013.01); H01L 29/7787 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 29/2003 (2013.01);
Abstract
High electron mobility transistors (HEMTs) including a cavity below a drain and methods of manufacturing HEMTS including removing a portion of a substrate below a drain.