The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jan. 28, 2011
In-jun Hwang, Hwaseong-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Jae-joon OH, Seongnam-si, KR;
In-jun Hwang, Hwaseong-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Jae-joon Oh, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.