The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 29, 2016

Filed:

Apr. 15, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Hyuk-soon Choi, Hwaseong-si, KR;

Jung-hee Lee, Daegu, KR;

Jai-kwang Shin, Anyang-si, KR;

Jae-joon Oh, Seongnam-si, KR;

Jong-bong Ha, Yongin-si, KR;

Jong-seob Kim, Hwaseong-si, KR;

In-jun Hwang, Hwaseong-si, KR;

Ki-ha Hong, Cheonan-si, KR;

Ki-sik Im, Daegu, KR;

Ki-won Kim, Daegu, KR;

Dong-seok Kim, Daegu, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/207 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/0254 (2013.01); H01L 21/76237 (2013.01); H01L 29/0847 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/4236 (2013.01); H01L 29/7787 (2013.01); H01L 29/207 (2013.01);
Abstract

The methods may include forming a first material layer on a substrate, increasing electric resistance of the first material layer, and forming a source pattern and a drain pattern, which are spaced apart from each other, on the first material layer, a band gap of the source and drain patterns greater than a band gap of a first material layer.


Find Patent Forward Citations

Loading…