The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2016

Filed:

Mar. 08, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Woo-chul Jeon, Daegu, KR;

Ki-yeol Park, Suwon-si, KR;

Young-hwan Park, Seoul, KR;

Jai-kwang Shin, Anyang-si, KR;

Jae-joon Oh, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03B 1/00 (2006.01); H03K 3/012 (2006.01); H03K 17/687 (2006.01);
U.S. Cl.
CPC ...
H03K 3/012 (2013.01); H03K 17/6871 (2013.01); H03K 2017/6875 (2013.01);
Abstract

An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.


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