The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2014
Filed:
Aug. 12, 2011
In-jun Hwang, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Jae-joon OH, Seongnam-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
In-jun Hwang, Hwaseong-si, KR;
Jai-kwang Shin, Anyang-si, KR;
Jae-joon Oh, Seongnam-si, KR;
Jong-seob Kim, Hwaseong-si, KR;
Hyuk-soon Choi, Hwaseong-si, KR;
Ki-ha Hong, Cheonan-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
According to an example embodiment, a power electronic device includes a first semiconductor layer, a second semiconductor layer on a first surface of the first semiconductor layer, and a source, a drain, and a gate on the second semiconductor layer. The source, drain and gate are separate from one another. The power electronic device further includes a 2-dimensional electron gas (2DEG) region at an interface between the first semiconductor layer and the second semiconductor layer, a first insulating layer on the gate and a second insulating layer adjacent to the first insulating layer. The first insulating layer has a first dielectric constant and the second insulating layer has a second dielectric constant less than the first dielectric constant.