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For the Inventor, By the Inventor

Zhubei, Taiwan

Jeng-Wei Yang

USPTO Granted Patents = 28 

 

Average Co-Inventor Count = 4.4

ph-index = 8

Forward Citations = 212(Granted Patents)


Location History:

  • Jhubei, TW (2008)
  • Hsinchu County, TW (2018)
  • Zhubei, TW (2016 - 2022)

Company Filing History:

goldMedal28 out of 622 
 
Silicon Storage Technology, Inc.
 patents

Years Active: 2008-2022

where 'Filed Patents' based on already Granted Patents

28 patents (USPTO):
1. 11488970 - Method of forming split gate memory cells with thinner tunnel oxide (2022-11-01),
2. 11315636 - Four gate, split-gate flash memory array with byte erase operation (2022-04-26),
3. 10714634 - Non-volatile split gate memory cells with integrated high K metal control gates and method of making same (2020-07-14),
4. 10608090 - Method of manufacturing a split-gate flash memory cell with erase gate (2020-03-31),
5. 10607703 - Split-gate flash memory array with byte erase operation (2020-03-31),
6. 10418451 - Split-gate flash memory cell with varying insulation gate oxides, and method of forming same (2019-09-17),
7. 10381359 - Non-volatile split game memory cells with integrated high K metal gate logic device and metal-free erase gate, and method of making same (2019-08-13),
8. 10312246 - Split-gate flash memory cell with improved scaling using enhanced lateral control gate to floating gate coupling (2019-06-04),
9. 10249631 - Split gate non-volatile flash memory cell having metal gates (2019-04-02),
10. 10141321 - Method of forming flash memory with separate wordline and erase gates (2018-11-27),
11. 9985042 - Method of integrating FinFET CMOS devices with embedded nonvolatile memory cells (2018-05-29),
12. 9972630 - Split gate non-volatile flash memory cell having metal gates and method of making same (2018-05-15),
13. 9972493 - Method of forming low height split gate memory cells (2018-05-15),
14. 9887206 - Method of making split gate non-volatile memory cell with 3D FinFET structure (2018-02-06),
15. 9793281 - Non-volatile split gate memory cells with integrated high K metal gate logic device and metal-free erase gate, and method of making same (2017-10-17),

Title: Innovations by Jeng-Wei Yang in Memory Cell Technology

Introduction: Jeng-Wei Yang, located in Zhubei, Taiwan, is an influential inventor known for his significant contributions to memory cell technologies. With a remarkable portfolio of 28 patents, he has become a prominent figure in the semiconductor industry.

Latest Patents: Among his latest innovations, Jeng-Wei Yang has developed a method of forming split gate memory cells with thinner tunnel oxide. This technique involves creating a first polysilicon block on a semiconductor substrate and utilizing a multi-faceted oxide layer that is thinned non-uniformly. This innovative method enhances performance by ensuring the oxide layer's sharp edge remains thinner than the other sections.

Another noteworthy patent is the four-gate, split-gate flash memory array designed for byte erase operations. This array features memory cells organized in a systematic layout with multiple source lines and erase gate connections. Jeng-Wei's design maximizes efficiency and performance, enabling effective data management in flash memory systems.

Career Highlights: Jeng-Wei Yang's career is marked by his significant achievements at Silicon Storage Technology, Inc., where he has contributed to various advancements in memory technology. His expertise in formulating patented methodologies has positioned him as a leader in the field of semiconductor memory solutions.

Collaborations: Throughout his career, Jeng-Wei has collaborated with notable coworkers, including Chien-Sheng Su and Nhan Do. Together, they have pioneered advancements in semiconductor technologies, further enhancing the capabilities of modern memory systems.

Conclusion: Jeng-Wei Yang's innovative spirit and dedication to advancing memory cell technology have led to the development of multiple patented inventions. His work not only represents personal achievement but also contributes to the broader evolution of the memory technology landscape. With his continued efforts, we can anticipate further advancements in the field of semiconductors.

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