The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2022
Filed:
Feb. 18, 2021
Silicon Storage Technology, Inc., San Jose, CA (US);
Jeng-Wei Yang, Zhubei, TW;
Man-Tang Wu, Hsinchu, TW;
Boolean Fan, Hsinchu, TW;
Nhan Do, Saratoga, CA (US);
Silicon Storage Technology, Inc., San Jose, CA (US);
Abstract
A method of forming a memory cell includes forming a first polysilicon block over an upper surface of a semiconductor substrate and having top surface and a side surface meeting at a sharp edge, forming an oxide layer with a first portion over the upper surface, a second portion directly on the side surface, and a third portion directly on the sharp edge, performing an etch that thins the oxide layer in a non-uniform manner such that the third portion is thinner than the first and second portions, performing an oxide deposition that thickens the first, second and third portions of the oxide layer, wherein after the oxide deposition, the third portion is thinner than the first and second portions, and forming a second polysilicon block having one portion directly on the first portion of the oxide layer and another portion directly on the third portion of the oxide layer.