Hsinchu, Taiwan

Boolean Fan


 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):

Title: The Innovative Contributions of Boolean Fan in Memory Cell Technology

Introduction

Boolean Fan, an esteemed inventor based in Hsinchu, Taiwan, has made significant strides in the field of memory cell technology. With an innovative approach to semiconductor fabrication, he holds a notable patent that enhances the efficiency of memory storage devices. His work continues to influence advancements in the tech industry, particularly within his role at Silicon Storage Technology, Inc.

Latest Patents

Boolean Fan’s patent, titled "Method of forming split gate memory cells with thinner tunnel oxide," represents a pivotal advancement in memory cell construction. This invention involves a sophisticated method of forming a memory cell that includes precise steps such as creating a first polysilicon block on a semiconductor substrate, layering an oxide layer with varying thicknesses, and performing an oxide deposition to achieve optimized results. The process ensures the third portion of the oxide layer remains thinner than the other portions, facilitating improved memory functionality.

Career Highlights

Throughout his career, Boolean Fan has dedicated his expertise to the continuous improvement of memory technology. His patent exemplifies his commitment to innovation, showcasing his deep understanding of semiconductor processes and materials. As part of Silicon Storage Technology, Inc., he has contributed significantly to the development of memory solutions that meet increasingly demanding technological requirements.

Collaborations

In his professional journey, Boolean Fan has collaborated with talented colleagues such as Jeng-Wei Yang and Man-Tang Wu. Together, they have worked towards pushing the boundaries of what is possible in semiconductor technology, making strides that benefit both the industry and consumers alike.

Conclusion

Boolean Fan stands out as a dedicated inventor whose contributions to the field of memory cell technology are invaluable. His patent not only highlights his innovative spirit but also his ability to work collaboratively with other experts to drive the industry forward. As technology continues to evolve, the impact of his work will undoubtedly be felt for years to come.

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