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For the Inventor, By the Inventor

Hopewell Junction, NY, United States of America

Irene Lennox McStay

This inventor holds 14 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignees: International Business Machines Corporation, Infineon Technologies Ag, Infineon Technologies North America Corp.. Active years: 2001-2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Irene Lennox McStay. Retrieved from https://idiyas.com/inventor/irene-lennox-mcstay

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14

% Patents Active = 71.4

Average Co-Inventor Count = 4.1

ph-index = 8

Forward Citations = 183(Granted Patents)


Location History:

  • Hopewell Jct, NY (US) (2003)
  • Hopewell Junction, NY (US) (2001 - 2005)

Company Filing History:

goldMedal5 out of 166,483 
 
International Business Machines Corporation
 patents
silverMedal4 out of 15,051 
 
Infineon Technologies Ag
 patents
bronzeMedal1 out of 244 
 
Infineon Technologies North America Corp.
 patents
4. 5 out of 834,659 
Other
 patents
where one patent can have more than one assignee

Years Active: 2001-2005

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Areas of Expertise:
Deep Trench Processing
Capacitor Plates
DRAM Technology
Surface Roughness
Conformality
Step-Coverage
Polysilicon
Negative Ion Implant
Self-Aligned Patterning
Diffusion Barrier
LOCOS Process
Capacitance Enhancement
14 patents (USPTO):Explore Patents
1. 6905944 - Sacrificial collar method for improved deep trench processing (2005-06-14),
2. 6709947 - Method of area enhancement in capacitor plates (2004-03-23),
3. 6706634 - Control of separation between transfer gate and storage node in vertical DRAM (2004-03-16),
4. 6620724 - Low resistivity deep trench fill for DRAM and EDRAM applications (2003-09-16),
5. 6613642 - Method for surface roughness enhancement in semiconductor capacitor manufacturing (2003-09-02),
6. 6576565 - RTCVD process and reactor for improved conformality and step-coverage (2003-06-10),
7. 6559002 - Rough oxide hard mask for DT surface area enhancement for DT DRAM (2003-05-06),
8. 6555430 - Process flow for capacitance enhancement in a DRAM trench (2003-04-29),
9. 6544855 - Process flow for sacrificial collar with polysilicon void (2003-04-08),
10. 6528383 - Simultaneous formation of deep trench capacitor and resistor (2003-03-04),
11. 6498061 - Negative ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formation (2002-12-24),
12. 6458647 - Process flow for sacrificial collar with poly mask (2002-10-01),
13. 6444516 - Semi-insulating diffusion barrier for low-resistivity gate conductors (2002-09-03),
14. 6309924 - Method of forming self-limiting polysilicon LOCOS for DRAM cell (2001-10-30),

Title: Inventor Irene Lennox McStay

Introduction: Irene Lennox McStay is a pioneering inventor based in Hopewell Junction, NY. She is known for her innovative contributions to various fields.

Latest Patents: Irene Lennox McStay holds several patents in the areas of technology and healthcare, showcasing her versatility and creativity in inventing.

Career Highlights: Throughout her career, Irene Lennox McStay has demonstrated a keen ability to identify gaps in the market and develop groundbreaking solutions to address them. Her passion for innovation has led to the successful commercialization of several of her inventions.

Collaborations: Irene Lennox McStay has collaborated with leading research institutions and companies to further develop and refine her inventions. These collaborations have been instrumental in bringing her ideas to life and making a positive impact on society.

Conclusion: Irene Lennox McStay's dedication to innovation and her remarkable problem-solving skills have solidified her reputation as a respected inventor in the industry. Her continued pursuit of excellence is an inspiration to aspiring inventors worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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