The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Dec. 13, 2001
Stephen Rahn, Fishkill, NY (US);
Irene McStay, Hopewell Jct, NY (US);
Helmut Horst Tews, Poughkeepsie, NY (US);
Uwe Schroeder, Fishkill, NY (US);
Stephan Kudelka, Fishkill, NY (US);
Rajarao Jammy, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for increasing the surface area of an original surface in a semiconductor device is disclosed. In an exemplary embodiment of the invention, the method includes forming a layered mask upon the original surface, the layered mask including a masking layer thereatop having a varying thickness. An isotropic etch is then applied to the layered mask, which isotropic etch further removes exposed portions of the original surface as the layered mask is removed. Thereby, the isotropic etch enhances the non-uniformity of the masking layer and creates a non-uniformity in planarity of the original surface.