The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2003
Filed:
Nov. 28, 2000
Michael P. Chudzik, Beacon, NY (US);
Johnathan Faltermeier, Lagrange, NY (US);
Rajarao Jammy, Wappingers Falls, NY (US);
Stephan Kudelka, Fishkill, NY (US);
Irene McStay, Hopewell Junction, NY (US);
Kenneth T. Settlemyer, Jr., Poughquag, NY (US);
Helmut Horst Tews, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods forming a trench region of a trench capacitor structure having increase surface area are provided. One method includes the steps of forming a discontinuous polysilicon layer on exposed walls of a lower trench region, the discontinuous polysilicon layer having gaps therein which expose portions of said substrate; oxidizing the lower trench region such that the exposed portions of said substrate provided by the gaps in the discontinuous polysilicon layer are oxidized into oxide material which forms a smooth and wavy layer with the discontinuous polysilicon layer; and etching said oxide material so as to form smooth hemispherical grooves on the walls of the trench region.