The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2003
Filed:
Oct. 19, 2001
Helmut Horst Tews, Unterhaching, DE;
Rolf Weis, Wappinger Falls, NY (US);
Irene Lennox McStay, Hopewell Junction, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
A process for forming a sacrificial collar on the top portion of a deep trench ( ) of a semiconductor wafer ( ). A nitride layer ( ) is deposited within the trenches ( ). A semiconductor material layer ( ) is deposited over the nitride layer ( ) and is etched back to a predetermined height (A) below the substrate 112 top surface. A semiconductor material plug ( ) is formed at the top surface of the recessed semiconductor material layer ( ), leaving a void ( ) in the bottom of each trench ( ). An oxide layer ( ) and nitride layer ( ) are formed over the wafer ( ) and trenches ( ), and the semiconductor material plug ( ) and semiconductor material layer ( ) are removed from the bottom of the trenches ( ).