The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2002
Filed:
Jul. 07, 2000
Lawrence Alfred Clevenger, Lagrangeville, NY (US);
Jack A. Mandelman, Stormville, NY (US);
Rajarao Jammy, Wappinger Falls, NY (US);
Oleg Gluschenkov, Poughkeepsie, NY (US);
Irene Lennox McStay, Hopewell Junction, NY (US);
Kwong Hon Wong, Wappinger Falls, NY (US);
Johnathan Faltermeier, Lagrange, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A gate structure for a semiconductor device, and particularly a MOSFET for such applications as CMOS technology. The gate structure entails an electrical insulating layer on a semiconductor substrate, over which a polysilicon gate electrode is formed. The gate structure further includes a gate conductor that is electrically connected with the gate electrode through a diffusion barrier layer having semi-insulating properties. The composition and thickness of the diffusion barrier layer are tailored so that the barrier layer is effective to block diffusion and intermixing between the gate conductor and polysilicon gate electrode, yet provides sufficient capacitive coupling and/or current leakage so as not to significantly increase the gate propagation delay of the gate structure.