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For the Inventor, By the Inventor

Wappingers Falls, NY, United States of America

Kwong Hon Wong

This inventor holds 61 USPTO granted patents and 2 EPO patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: International Business Machines Corporation, Novellus Systems Incorporated, Infineon Technologies Ag. Active years: 1993-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kwong Hon Wong. Retrieved from https://idiyas.com/inventor/kwong-hon-wong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 61

% Patents Active = 54.1


Average Co-Inventor Count = 5.0

ph-index = 17

Forward Citations = 997(Granted Patents)

Forward Citations (Not Self Cited) = 991(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Croton-On-Hudson, NY (US) (1993)
  • Wappinger Falls, NY (US) (1995 - 2002)
  • Wappingers Falls, NY (US) (1996 - 2013)

Company Filing History:

goldMedal56 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal2 out of 993 
 
Novellus Systems Incorporated
 patents
bronzeMedal1 out of 15,027 
 
Infineon Technologies Ag
 patents
4. 5 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 1993-2013

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Areas of Expertise:
Semiconductor
MEMS Switch
PFET
Interconnect Structures
Thin Film Resistors
Metal Gate Transistor
Organic Dielectric
Copper Interlayer
Decoupling Capacitor
Polymer Transistor
High-K Dielectric
Chemical Reaction
61 patents (USPTO):Explore Patents
1. 8481415 - Self-aligned contact combined with a replacement metal gate/high-K gate dielectric (2013-07-09),
2. 8304912 - Structure and method for MOSFET gate electrode landing pad (2012-11-06),
3. 7804136 - Method of forming nitride films with high compressive stress for improved PFET device performance (2010-09-28),
4. 7683418 - High-temperature stable gate structure with metallic electrode (2010-03-23),
5. 7657995 - Method of fabricating a microelectromechanical system (MEMS) switch (2010-02-09),
6. 7521345 - High-temperature stable gate structure with metallic electrode (2009-04-21),
7. 7491660 - Method of forming nitride films with high compressive stress for improved PFET device performance (2009-02-17),
8. 7488677 - Interconnect structures with encasing cap and methods of making thereof (2009-02-10),
9. 7462527 - Method of forming nitride films with high compressive stress for improved PFET device performance (2008-12-09),
10. 7348870 - Structure and method of fabricating a hinge type MEMS switch (2008-03-25),
11. 7279413 - High-temperature stable gate structure with metallic electrode (2007-10-09),
12. 7270884 - [object Object] (2007-09-18),
13. 7223691 - Method of forming low resistance and reliable via in inter-level dielectric interconnect (2007-05-29),
14. 7208414 - Method for enhanced uni-directional diffusion of metal and subsequent silicide formation (2007-04-24),
15. 7193500 - Thin film resistors of different materials (2007-03-20),

Sure, I can help you with that. Here is the article about inventor Kwong Hon Wong:

Title: Kwong Hon Wong - A Pioneer in Technological Innovation

Introduction:

Kwong Hon Wong is a renowned inventor based in Wappingers Falls, NY, whose passion for innovation and relentless pursuit of excellence have left a lasting impact on the world of technology. With an impressive portfolio of 61 patents, Kwong Hon Wong continues to inspire the next generation of inventors and entrepreneurs.

Latest Patents:

1. Self-aligned contact combined with a replacement metal gate/high-K gate dielectric:

- This patent involves a method of forming a semiconductor device, including the formation of a replacement gate structure on a substrate, followed by the creation of source and drain regions. A high-k dielectric spacer and gate dielectric are then formed, along with contacts through the intralevel dielectric layer.

2. Structure and method for MOSFET gate electrode landing pad:

- This patent details a transistor device and method involving a landing pad with flanged ends overlapping the second gate electrode, providing a unique structure for the second gate electrode.

Career Highlights:

Throughout his career, Kwong Hon Wong has made significant contributions to the field of technology. He has worked with prestigious companies such as IBM, where he played a key role in driving innovation and pushing the boundaries of technological advancement.

Collaborations:

Kwong Hon Wong has had the privilege of working alongside talented individuals such as Lawrence Alfred Clevenger and Louis L Hsu, who have further enriched his innovative journey with their expertise and collaboration.

Conclusion:

In conclusion, Kwong Hon Wong stands as a true pioneer in the world of technology, with a remarkable track record of patents and a legacy that continues to inspire generations of inventors and entrepreneurs. His dedication to innovation and excellence serves as a beacon for aspiring inventors, showcasing the power of relentless pursuit in the realm of technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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