The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2007
Filed:
Oct. 14, 2004
Cyril Cabral, Jr., Ossining, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Patrick W. Dehaven, Poughkeepsie, NY (US);
Chester T. Dziobkowski, Hopewell Junction, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Terry A. Spooner, New Fairfield, CT (US);
Tsong-lin L. Tai, Stormville, NY (US);
Kwong Hon Wong, Wappingers Falls, NY (US);
Chin-chao Yang, Beacon, NY (US);
Cyril Cabral, Jr., Ossining, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Patrick W. DeHaven, Poughkeepsie, NY (US);
Chester T. Dziobkowski, Hopewell Junction, NY (US);
Sunfei Fang, LaGrangeville, NY (US);
Terry A. Spooner, New Fairfield, CT (US);
Tsong-Lin L. Tai, Stormville, NY (US);
Kwong Hon Wong, Wappingers Falls, NY (US);
Chin-Chao Yang, Beacon, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A novel interlevel contact via structure having low contact resistance and improved reliability, and method of forming the contact via. The method comprises steps of: etching an opening through an interlevel dielectric layer to expose an underlying metal (Copper) layer surface; and, performing a low energy ion implant of an inert gas (Nitrogen) into the exposed metal underneath; and, depositing a refractory liner into the walls and bottom via structure which will have a lower contact resistance due to the presence of the proceeding inert gas implantation. Preferably, the inert Nitrogen gas reacts with the underlying exposed Copper metal to form a thin layer of CuN.