Structure and method of fabricating a hinge type mems switch

Abstract

A hinge type MEMS switch that is fully integratable within a semiconductor fabrication process, such as a CMOS, is described. The MEMS switch constructed on a substrate consists of two posts, each end thereof terminating in a cap; a movable conductive plate having a surface terminating in a ring in each of two opposing edges, the rings being loosely connected to guiding posts; an upper and lower electrode pairs; and upper and lower interconnect wiring lines connected and disconnected by the movable conductive plate. When in the energized state, a low voltage level is applied to the upper electrode pair, while the lower electrode pair is grounded. The conductive plate moves up, shorting two upper interconnect wirings lines. Conversely, the conductive plate moves down when the voltage is applied to the lower electrode pair, while the upper electrode pair is grounded, shorting the two lower interconnect wiring lines and opening the upper wiring lines. The MEMS switch thus formed generates an even force that provides the conductive plate with a translational movement, with the displacement being guided by the two vertical posts.