The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2012
Filed:
Mar. 25, 2008
Lawrence A. Clevenger, LaGrangeville, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Louis C. Hsu, Fishkill, NY (US);
Carl Radens, LaGrangeville, NY (US);
Kwong Hon Wong, Wappingers Falls, NY (US);
Chih-chao Yang, Poughkeepsie, NY (US);
Lawrence A. Clevenger, LaGrangeville, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Louis C. Hsu, Fishkill, NY (US);
Carl Radens, LaGrangeville, NY (US);
Kwong Hon Wong, Wappingers Falls, NY (US);
Chih-Chao Yang, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A transistor device and method of forming the same comprises a substrate; a first gate electrode over the substrate; a second gate electrode over the substrate; and a landing pad comprising a pair of flanged ends overlapping the second gate electrode, wherein the structure of the second gate electrode is discontinuous with the structure of the landing pad.