The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2002
Filed:
Dec. 06, 2000
Rama Divakaruni, Somers, NY (US);
Stephan Kudelka, Fishkill, NY (US);
Helmut Tews, Poughkeepsie, NY (US);
Irene McStay, Hopewell Junction, NY (US);
Kil-Ho Lee, Wappingers Falls, NY (US);
Uwe Schroeder, Klotzsche, DE;
Other;
Abstract
A process for fabricating a single-sided semiconductor deep trench structure filled with polysilicon trench fill material includes the following steps. Form a thin film, silicon nitride, barrier layer over the trench fill material. Deposit a thin film of an amorphous silicon masking layer over the barrier layer. Perform an angled implant into portions of the amorphous silicon masking layer which are not in the shadow of the deep trench. Strip the undoped portions of the amorphous silicon masking layer from the deep trench. Then strip the newly exposed portions of barrier layer exposing a part of the trench fill polysilicon surface and leaving the doped, remainder of the amorphous silicon masking layer exposed. Counterdope the exposed part of the trench fill material. Oxidize exposed portions of the polysilicon trench fill material, and then strip the remainder of the masking layer.