The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 10, 2003

Filed:

Feb. 14, 2002
Applicant:
Inventors:

Ashima Chakravarti, Hopewell Junction, NY (US);

Oleg Gluschenkov, Wappingers Falls, NY (US);

Irene Lennox McStay, Hopewell Junction, NY (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract

An apparatus ( ) and method for depositing material on a semiconductor wafer with non-planar structures ( ). The wafer ( ) is positioned in a chamber ( ), and reactive gases ( ) are introduced into the chamber ( ). The gases ( ) and wafer ( ) are heated, wherein the gas ( ) temperature in the process chamber ( ) and in the vicinity of the wafer ( ) surface is lower than the temperature of the wafer ( ) surface. A material is deposited on the wafer ( ) surface using chemical vapor deposition. A gas cooler may be utilized to lower the temperature of the reactive gases ( ) while the wafer ( ) is heated.


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