The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2003
Filed:
Dec. 12, 2001
Satya N. Chakravarti, Hopewell Junction, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Irene L. McStay, Hopewell Junction, NY (US);
Kwong Hon Wong, Wappingers Falls, NY (US);
Other;
Abstract
A compact resistor is formed in an integrated circuit using many of the same steps as are employed in forming a trench capacitor for a DRAM cell; in particular depositing a layer of heavily doped germanium in the trench interior after the step of doping the substrate to form the bottom plate for the capacitor, depositing polysilicon having the required resistivity in the trench then removing the germanium and leaving only enough to form an ohmic contact in the trench bottom.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile