Hopewell Junction, NY, United States of America

Satya N Chakravarti

This inventor holds 19 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: International Business Machines Corporation, Freescale Semiconductor,inc., Other. Active years: 1981-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Satya N Chakravarti. Retrieved from https://idiyas.com/inventor/satya-n-chakravarti

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 52.6

Average Co-Inventor Count = 3.6

ph-index = 9

Forward Citations = 245(Granted Patents)


Location History:

  • Troy, NY (US) (1981)
  • Hopewell Junction, NY (US) (1985 - 2015)

Company Filing History:


Years Active: 1981-2015

Loading Chart...
Areas of Expertise:
Antifuse
Decoupling Capacitor
E-fuse
MOSFET
Metal Gate Layers
DRAM Cell
Transistor Arrays
Leakage Measurement
Wafer Properties
High Density
Electromigration
Passive Devices
19 patents (USPTO):Explore Patents

Title: **Satya N Chakravarti: Innovator in Electrical Engineering**

Introduction

Satya N Chakravarti is a prominent inventor based in Hopewell Junction, NY, known for his significant contributions to the field of electrical engineering. With a remarkable portfolio of 19 patents, Chakravarti continues to push the boundaries of innovation in technology.

Latest Patents

Among his latest innovative patents are the **Replacement-gate-compatible programmable electrical antifuse** and the **Nanopillar decoupling capacitor**. The programmable electrical antifuse integrates advanced techniques where, after the planarization of a gate level dielectric layer, a dummy structure is removed to create a recess. This involves depositing a first conductive material layer and an amorphous metal oxide into the recess area, followed by a second conductive material layer. To program the antifuse, current is passed through conductive contacts, transforming the amorphous metal oxide into a crystallized state with lower resistance. A sensing circuit effectively determines the state of the metal oxide, ensuring precision in its functionality.

The **Nanopillar decoupling capacitor** represents a significant advancement in capacitor designs leveraging nanotechnology. This innovative capacitor consists of a first electrode, an intermediate layer featuring multiple nanochannels, a conformal dielectric layer lining these channels, and a second electrode formed from an array of nanopillars. This design enhances the performance of semiconductor devices that incorporate these decoupling capacitors.

Career Highlights

Satya N Chakravarti has worked with leading technology companies, including IBM and Freescale Semiconductor, where he has further developed his expertise and contributed to groundbreaking innovations in electrical engineering. His work has played a crucial role in advancing semiconductor technology and designing high-performance electronic components.

Collaborations

Chakravarti has collaborated with notable colleagues including Dechao Guo and Keith Kwong Hon Wong. These collaborations have fostered an environment of innovation, resulting in several patented technologies that impact various applications within the industry.

Conclusion

Satya N Chakravarti's contributions to electrical engineering highlight the importance of innovative thinking in technology development. His patents, especially in the realms of programmable antifuses and nanotechnology-enabled capacitors, demonstrate his commitment to advancing the field. As he continues to innovate, the impact of his work is expected to resonate throughout the industry for years to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…