Method and structure for improving uniformity of passive devices in metal gate technology

Abstract

Method of forming a semiconductor device which includes the steps of obtaining a semiconductor substrate having a logic region and an STI region; sequentially depositing layers of high K material, metal gate, first silicon and hardmask; removing the hardmask and first silicon layers from the logic region; applying a second layer of silicon on the semiconductor substrate such that the logic region has layers of high K material, metal gate and second silicon and the STI region has layers of high K material, metal gate, first silicon, hardmask and second silicon. There may also be a second hardmask layer between the metal gate layer and the first silicon layer in the STI region. There may also be a hardmask layer between the metal gate layer and the first silicon layer in the STI region but no hardmask layer between the first and second layers of silicon in the STI region.