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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9059006 B1

PDFFull Text
Expired
Date of Patent:
Jun. 16, 2015

Filed:

Jun. 14, 2012

Replacement-gate-compatible programmable electrical antifuse

Applicants:

Satya N. Chakravarti, Hopewell Junction, NY (US);

Dechao Guo, Ossining, NY (US);

Chuck T. Le, Poughkeepsie, NY (US);

Byoung W. Min, Austin, TX (US);

Thekkemadathil V. Rajeevakumar, Scarsdale, NY (US);

Keith Kwong Hon Wong, Wappingers Falls, NY (US);

Inventors:

Satya N. Chakravarti, Hopewell Junction, NY (US);

Dechao Guo, Ossining, NY (US);

Chuck T. Le, Poughkeepsie, NY (US);

Byoung W. Min, Austin, TX (US);

Thekkemadathil V. Rajeevakumar, Scarsdale, NY (US);

Keith Kwong Hon Wong, Wappingers Falls, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

Yuanmin Cai

Primary Examiner:

Hoai-An D Nguyen

Int. Cl.
CPC ...
G01R 27/08 (2006.01); H01L 23/52 (2006.01); H01L 29/10 (2006.01); H01L 27/06 (2006.01); H01L 23/525 (2006.01); H01L 27/112 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0617 (2013.01); H01L 23/5252 (2013.01); H01L 27/112 (2013.01); H01L 27/11206 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01);
Abstract

After planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. A first conductive material layer and an amorphous metal oxide are deposited into the recess area. A second conduct material layer fills the recess. After planarization, an electrical antifuse is formed within the filled recess area, which includes a first conductive material portion, an amorphous metal oxide portion, and a second conductive material portion. To program the electrical antifuse, current is passed between the two terminals in the pair of the conductive contacts to transform the amorphous metal oxide portion into a crystallized metal oxide portion, which has a lower resistance. A sensing circuit determines whether the metal oxide portion is in an amorphous state (high resistance state) or in a crystalline state (low resistance state).

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