Scarsdale, NY, United States of America

Thekkemadathil V Rajeevakumar

This inventor holds 21 USPTO granted patents, primarily in DRAM Technology. Top assignees: International Business Machines Corporation, Freescale Semiconductor,inc.. Active years: 1982-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Thekkemadathil V Rajeevakumar. Retrieved from https://idiyas.com/inventor/thekkemadathil-v-rajeevakumar

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 81.0

Average Co-Inventor Count = 1.2

ph-index = 11

Forward Citations = 470(Granted Patents)


Location History:

  • Croton-on-Hudson, NY (US) (1982)
  • Hopewell Junction, NY (US) (2012)
  • Scarsdale, NY (US) (1986 - 2015)

Company Filing History:


Years Active: 1982-2015

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Areas of Expertise:
Programmable Antifuse
MOSFET Fuse
On-Chip Decoupling Capacitors
Dual Trench Capacitor
SOI Trench DRAM Cell
Bandgap Reference Generator
High Capacitance Storage Node
Low Leakage Substrate
Self-Timed Precharge Circuit
CMOS Decoder
Superconducting Soliton Devices
Trench Sidewall Structure
21 patents (USPTO):Explore Patents

Title: Innovations of Thekkemadathil V Rajeevakumar

Introduction

Thekkemadathil V Rajeevakumar, based in Scarsdale, NY, is an accomplished inventor with an impressive portfolio of 21 patents to his name. His work predominantly focuses on advancements in electrical engineering, particularly in the area of programmable electrical antifuses, which have significant implications for technology and circuitry.

Latest Patents

Among his latest patents is the "Replacement-gate-compatible programmable electrical antifuse." This innovative approach involves several key processes. Initially, after the planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. The process continues with the deposition of a first conductive material layer and an amorphous metal oxide into the recess area, followed by the filling of the recess with a second conductive material layer. After another round of planarization, an electrical antifuse emerges within the filled recess area. This includes a first conductive material portion, an amorphous metal oxide portion, and a second conductive material portion. To program the electrical antifuse, an electric current is passed between two terminals of the conductive contacts to alter the amorphous metal oxide portion into a crystallized metal oxide portion, which demonstrates lower resistance. A sensing circuit is used to assess whether the metal oxide portion is in an amorphous state (high resistance state) or in a crystalline state (low resistance state).

Career Highlights

Thekkemadathil has had a noteworthy career, contributing his expertise to prominent companies such as IBM and Freescale Semiconductor, Inc. His role in these organizations has facilitated the development of crucial technologies that support advanced manufacturing and design in electrical engineering.

Collaborations

Throughout his journey, Thekkemadathil has collaborated with esteemed colleagues, including Satya N Chakravarti and Lewis M Terman. These partnerships have played a vital role in fostering creativity and innovation within the field, further emphasizing the significance of teamwork in the landscape of technological advancements.

Conclusion

Thekkemadathil V Rajeevakumar stands out as a prolific inventor in the realm of electrical engineering. His contributions through innovative patents, collaborations, and work with leading companies underscore his impact on the industry. As technology continues to evolve, the significance of his advancements in programmable electrical antifuses is likely to resonate in future developments.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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