The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 1997
Filed:
Oct. 06, 1994
Applicant:
Inventor:
Thekkemadathil V Rajeevakumar, Scarsdale, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 47 ; 437 60 ;
Abstract
A trench SOI structure is described. The structure is useful, for instance in the fabrication of DRAM cells. The structure can be fabricated by extending the conventional substrate plate trench cell. The SOI cell eliminates the parasitic trench sidewall leakage, reduces soft errors, eliminates well to substrate leakage, in addition to all the other advantages of SOI devices.
Rajeevakumar, Thekkemadathil. (1997). Soi trench dram cell for 256 mb dram and beyond (U.S. Patent No. 5593912). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5593912
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile