The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jul. 06, 2006
Satya N. Chakravarti, Hopewell Junction, NY (US);
Thekkemadathil V. Rajeevakumar, Scarsdale, NY (US);
Timothy J. Sullivan, Franklin Lakes, NJ (US);
Satya N. Chakravarti, Hopewell Junction, NY (US);
Thekkemadathil V. Rajeevakumar, Scarsdale, NY (US);
Timothy J. Sullivan, Franklin Lakes, NJ (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A one-time programmable field effect transistor (FET) e-fuse has a silicided gate connected to the drain while the source is grounded. A voltage stimulus applied to the drain forces current to flow through the channel coupling the drain to the source. The magnitude of the current exceeding the threshold current density initiates electromigration of the source/drain silicide into the channel region, such that the source/drain of the FET is shorted to the substrate after programming. Under these constraints, the fuse device conducts current even when the transistor is in the off-state. The MOSFET e-fuse preferably uses a minimum channel length NFET/PFET and scales down its dimensions to conform to those allowed by the technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile