Austin, TX, United States of America

Byoung W Min

USPTO Granted Patents = 27 

Average Co-Inventor Count = 2.3

ph-index = 11

Forward Citations = 293(Granted Patents)


Location History:

  • Hopewell Junction, NY (US) (2010 - 2012)
  • Austin, TX (US) (2003 - 2016)

Company Filing History:


Years Active: 2003-2016

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27 patents (USPTO):

Title: Byoung W. Min: Innovator in Semiconductor Technology

Introduction

Byoung W. Min is a prominent inventor based in Austin, TX, specializing in advancements within semiconductor technology. With an impressive portfolio of 27 patents, he has made significant contributions that influence modern electronics and non-volatile memory systems. His work involves innovative methods to improve the properties of gate oxides and develop advanced semiconductor structures.

Latest Patents

Among his latest patents is a groundbreaking method for adjusting selective gate oxide properties using fluorine. This innovation focuses on incorporating fluorine into selective portions of a gate oxide, allowing for enhanced control over its characteristics. In one embodiment, this fluorine addition facilitates oxidation, thereby increasing the thickness of the selective portion. Another embodiment describes how fluorine can lower the dielectric constant of the oxide in these selective regions. This method contributes significantly to reducing program disturb in non-volatile memory applications.

Additionally, Byoung W. Min holds a patent for an integrated split gate non-volatile memory cell and logic structure. This invention outlines a meticulous process for forming a semiconductor structure, which includes creating a select gate and charge storage layer specifically in the non-volatile memory region. The patent also describes the formation of a dummy gate structure in a logic region and the innovative polishing techniques that ensure a coplanar surface alignment between the charge storage layer and the metal logic gate.

Career Highlights

Byoung W. Min has had an illustrious career working for leading technology companies. He has contributed to Freescale Semiconductor, Inc. and the renowned Motorola Corporation, where he honed his expertise in semiconductor development and innovation. His work in these organizations has laid the foundation for many of his inventive breakthroughs in the field.

Collaborations

Throughout his career, Byoung has collaborated with talented colleagues, including notable individuals such as Leo Mathew and Michael A. Mendicino. These collaborations have fostered a creative environment that has led to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Byoung W. Min's contributions to the field of semiconductor technology are invaluable. With his extensive patent portfolio and collaboration with esteemed colleagues, he continues to drive innovation forward, shaping the future of non-volatile memory and semiconductor structures. His commitment to excellence and invention solidifies his status as a leading figure in technology advancements.

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