The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 2010
Filed:
Oct. 01, 2008
Byoung W. Min, Hopewell Junction, NY (US);
Stefan Zollner, Hopewell Junction, NY (US);
Qingqing Liang, Fishkill, NY (US);
Byoung W. Min, Hopewell Junction, NY (US);
Stefan Zollner, Hopewell Junction, NY (US);
Qingqing Liang, Fishkill, NY (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method for forming a body contacted SOI transistor includes forming a semiconductor layer () having a body contact region (), a body access region (), and an active region (). An SOI transistor is formed in the active region by etching a metal gate structure () to have a first portion () formed over the active region, and a second portion () formed over at least part of the body access region. By implanting ions () at a non-perpendicular angle into an implant region () in the body access region so as to encroach toward the active region and/or under the second portion of the etched metal gate structure, silicide () may be subsequently formed over the body contact region and the implant region, thereby reducing formation of a depletion region () in the body access region.