The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2010
Filed:
Feb. 28, 2007
Byoung W. Min, Austin, TX (US);
James K. Schaeffer, Austin, TX (US);
David C. Sing, Austin, TX (US);
Byoung W. Min, Austin, TX (US);
James K. Schaeffer, Austin, TX (US);
David C. Sing, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A resistive device () and a transistor () are formed. Each uses a portion of a metal layer () that is formed at the same time and thus additional process steps are avoided to remove the metal from the resistive device. The metal used in the resistive device is selectively treated to increase the resistance in the resistive device. A polycrystalline semiconductor material layer () overlies the metal layer in the resistive device. The combination of these layers provides the resistive device. In one form the metal is treated after formation of the polycrystalline semiconductor material layer. In one form the metal treatment involves an implant of a species, such as oxygen, to increase the resistivity of the metal. Various transistor structures are formed using the untreated portion of the metal layer as a control electrode.