The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Feb. 10, 2015
Applicant:
Freescale Semiconductor, Inc., Austin, TX (US);
Inventor:
Byoung W. Min, Austin, TX (US);
Assignee:
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/792 (2006.01); H01L 29/51 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/792 (2013.01); H01L 21/26506 (2013.01); H01L 21/26586 (2013.01); H01L 21/2822 (2013.01); H01L 21/28176 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01); H01L 29/42344 (2013.01); H01L 29/42368 (2013.01); H01L 29/51 (2013.01); H01L 29/511 (2013.01); H01L 29/512 (2013.01);
Abstract
Fluorine is located in selective portions of a gate oxide to adjust characteristics of the gate oxide. In some embodiments, the fluorine promotes oxidation which increases the thickness of the selective portion of the gate oxide. In some embodiments, the fluorine lowers the dielectric constant of the oxide at the selective portion. In some examples, having fluorine at selective portions of a select gate oxide of a non volatile memory may reduce program disturb of the memory.