The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2002
Filed:
Apr. 19, 2001
Kwong H. Wong, Wappingers Falls, NY (US);
Ashima B. Chakravarti, Hopewell Junction, NY (US);
Satya N. Chakravarti, Hopewell Junction, NY (US);
Subramanian S. Iyer, Mount Kisco, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for removing surface oxide from polysilicon includes depositing a very thin layer of germanium (e.g. monolayers in thickness) over the polysilicon immediately before a subsequent polysilicon deposition step, and then heating the germanium-coated polysilicon in a vacuum to sublime (remove) volatile germanium oxide. This method is applied to formation of a trench capacitor, which uses either doped amorphous silicon or doped amorphous SiGe material in the formation of the electrodes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile