The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Aug. 26, 2009
Satya N. Chakravarti, Hopewell Junction, NY (US);
Dechao Guo, Hopewell Junction, NY (US);
Huiming Bu, Albany, NY (US);
Keith Kwong Hon Wong, Hopewell Junction, NY (US);
Satya N. Chakravarti, Hopewell Junction, NY (US);
Dechao Guo, Hopewell Junction, NY (US);
Huiming Bu, Albany, NY (US);
Keith Kwong Hon Wong, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Techniques for incorporating nanotechnology into decoupling capacitor designs are provided. In one aspect, a decoupling capacitor is provided. The decoupling capacitor comprises a first electrode; an intermediate layer adjacent to the first electrode having a plurality of nanochannels therein; a conformal dielectric layer formed over the intermediate layer and lining the nanochannels; and a second electrode at least a portion of which is formed from an array of nanopillars that fill the nanochannels in the intermediate layer. Methods for fabricating the decoupling capacitor are also provided, as are semiconductor devices incorporating the decoupling capacitor design.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile