The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2002
Filed:
Aug. 27, 2001
Helmut Horst Tews, Unterhaching, DE;
Stephan Kudelka, Fishkill, NY (US);
Irene McStay, Hopewell Junction, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
A process for forming a sacrificial collar ( ) on the top portion of a deep trench ( ). A nitride layer ( ) is deposited within the trench ( ). A semiconductor layer ( ) is deposited over the nitride layer ( ). A top portion of the semiconductor layer ( ) is doped to form doped semiconductor layer ( ). Undoped portions ( ) of the semiconductor layer are removed, and the doped semiconductor layer ( ) is used to pattern the nitride layer ( ), removing the lower portion of nitride layer ( ) from within deep trenches ( ) and leaving a sacrificial collar ( ) at the top of the trenches ( ).