The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2005
Filed:
May. 08, 2003
Michael Patrick Chudzik, Beacon, NY (US);
Irene Mcstay, Hopewell Junction, NY (US);
Helmut Horst Tews, Munich, DE;
Porshia Shane Wrschka, Danbury, CT (US);
Michael Patrick Chudzik, Beacon, NY (US);
Irene McStay, Hopewell Junction, NY (US);
Helmut Horst Tews, Munich, DE;
Porshia Shane Wrschka, Danbury, CT (US);
International Business Machines Corporation, Armonk, NY (US);
Infineon Technologies AG, Munich, DE;
Abstract
A method for fabricating a deep trench etched into a semiconductor substrate is provided by the present invention. The trench is divided into an upper portion and a lower portion and the method allows for the lower portion to be processed differently from the upper portion. After the trench is etched into the semiconductor substrate, a nitride layer is formed over a sidewall of the trench. A layer of oxide is then formed over the nitride layer. A filler material is then deposited and recessed to cover the oxide layer in the lower portion of the trench, followed by the removal of the oxide layer from the upper portion of the trench above the filler material. Once the oxide layer is removed from the upper portion of the trench, the filler material can also be removed, while allowing the oxide layer and the nitride layer to remain in the lower portion of the trench. Silicon is selectively deposited on the exposed nitride layer in the upper portion of the trench. The oxide layer and the nitride layer is then removed from the lower portion. Finally, the lower portion of the trench is processed selectively to nitride, e.g. by one or more capacitor forming processes, and then the upper portion of the trench is processed.