The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Dec. 06, 2002
Applicant:
Inventors:
Porshia S. Wrschka, Danbury, CT (US);
Irene McStay, Hopewell Junction, NY (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ;
U.S. Cl.
CPC ...
H01L 2/120 ;
Abstract
A method and structure for increasing the area and capacitance of both trench and planar integrated circuit capacitors uses Si nodules deposited on a thin dielectric seeding layer that is absorbed during subsequent thermal processing, thereby avoiding a high resistance layer in the capacitor.
Wrschka, Porshia. (2004). Method of area enhancement in capacitor plates (U.S. Patent No. 6709947). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6709947
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile