Hui Nie

This inventor holds 67 USPTO granted patents and 22 published patent applications and 4 EPO patents, primarily in Gallium Nitride Devices (CPC class H01L). Top assignees: Avogy, Inc., Alta Devices, Inc., Utica Leaseco, LLC. Active years: 2013-2023.

USPTO Granted Patents = 67 (Patent Applications = 22)

% Patents Active = 92.5

EPO Patents = 4 (Patent Applications = 4)

Average Co-Inventor Count = 5.1

ph-index = 6

Forward Citations = 140(Granted Patents)

Forward Citations (Not Self Cited) = 93(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Santa Clara, CA (US) (2017)
Cupertino, CA (US) (2013 - 2023)

Company Filing History:

Nexgen Power Systems, Inc.

patents

Years Active: 2013-2023

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Areas of Expertise:

Gallium Arsenide

Photovoltaic Devices

Optoelectronic Devices

Heterojunction

GaN JFET

Schottky Diode

P-N Junction

Vertical Transistor

Defect Density

Merged P-I-N Diode

Aluminum Gallium Nitride

Device Fabrication

67 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11695088 - Self-bypass diode function for gallium arsenide photovoltaic devices (2023-07-04),

2. 11211506 - Self-bypass diode function for gallium arsenide photovoltaic devices (2021-12-28),

3. 11121272 - Self-bypass diode function for gallium arsenide photovoltaic devices (2021-09-14),

4. 10916676 - Optoelectronic devices including heterojunction and intermediate layer (2021-02-09),

5. 10319829 - Method and system for in-situ etch and regrowth in gallium nitride based devices (2019-06-11),

6. 9954131 - Optoelectronic devices including heterojunction and intermediate layer (2018-04-24),

7. 9716196 - Self-bypass diode function for gallium arsenide photovoltaic devices (2017-07-25),

8. 9691921 - Textured metallic back reflector (2017-06-27),

9. 9525039 - Method of fabricating a merged P-N junction and schottky diode with regrown gallium nitride layer (2016-12-20),

10. 9484470 - Method of fabricating a GaN P-i-N diode using implantation (2016-11-01),

11. 9472684 - Lateral GaN JFET with vertical drift region (2016-10-18),

12. 9450112 - GaN-based Schottky barrier diode with algan surface layer (2016-09-20),

13. 9397186 - Method of fabricating a gallium nitride merged P-I-N schottky (MPS) diode by regrowth and etch back (2016-07-19),

14. 9330918 - Edge termination by ion implantation in gallium nitride (2016-05-03),

15. 9324844 - Method and system for a GaN vertical JFET utilizing a regrown channel (2016-04-26),

Title: Hui Nie: A Pioneer in Photovoltaic Innovations

Introduction

Hui Nie is a prominent inventor based in Cupertino, California, known for his significant contributions to the field of photovoltaic devices. With an impressive portfolio of 67 patents, Nie's work has advanced the technology utilized in solar energy conversion.

Latest Patents

One of his latest innovations is the "Self-bypass diode function for gallium arsenide photovoltaic devices." This invention relates to photovoltaic devices where a method for forming a gallium arsenide based photovoltaic device is described. It includes a semiconductor structure with an absorber layer made of gallium arsenide. A notable feature of this invention is the bypass function within a p-n junction of the semiconductor structure. Under reverse-bias conditions, this junction breaks down in a controlled manner through a Zener breakdown effect, enhancing the reliability and efficiency of gallium arsenide photovoltaic devices.

Career Highlights

Hui Nie has worked with reputable companies in the renewable energy sector, including Avogy, Inc. and Alta Devices, Inc. His contributions have been critical in developing advanced semiconductor technologies aimed at improving solar energy efficiency.

Collaborations

Throughout his career, Hui has collaborated with notable professionals such as Isik C. Kizilyalli and Richard J. Brown. These partnerships have further fueled innovation in photovoltaic technology, leading to solutions that address some of the industry's most pressing challenges.

Conclusion

Hui Nie's dedication to innovation in photovoltaic technology is evident through his substantial contributions and patents. His work continues to inspire future advancements in solar energy solutions, making him a key figure in the field.